Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

被引：15
|
作者：
Navarro, Carlos [1 ]
Rodriguez, Noel [1 ]
Ohata, Akiko [2 ]
Gamiz, Francisco [1 ]
Andrieu, Francois [3 ]
Fenouillet-Beranger, Claire [4 ]
Faynot, Olivier [3 ]
Cristoloveanu, Sorin [5 ]
机构：
[1] Univ Granada, Dept Elect, E-18071 Granada, Spain
[2] Osaka City Univ, Dept Elect, Osaka 5588585, Japan
[3] CEA LETI Minatec, F-38054 Grenoble, France
[4] STMicroelect, F-38926 Crolles, France
[5] Minatec, Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期
关键词：
Effective field; mobility; SOI-MOSFETs; split C(V); ultrathin SOI; universal mobility; SI MOSFETS;
D O I：
10.1109/LED.2012.2198193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel technique for the accurate carrier mobility evaluation in ultrathin fully depleted SOI-MOSFETs is proposed. The mobility representation, obtained from the combination of Poisson-Schrodinger numerical simulations and split C(V) experimental results, discloses the mobility dependence on the effective field by accounting for the actual electric field and carrier profiles in the body of the device. As example of this technique, we show that the apparent larger mobility enhancement, due to back-gate bias, observed in thin-BOX transistors with respect to thick-BOX devices, is related to an electric field reduction rather than other technological factors.
引用
收藏
页码：1102 / 1104
页数：3
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