FDSOI to nanowires and single electron transistors

被引：0
|
作者：
Vinet, M. [1 ]
Barraud, S.
Jehl, X.
Lavieville, R.
Deshpande, V.
Wacquez, R.
Sanquer, M.
Coquand, R.
Cueto, O.
Roche, B.
Voisin, B.
Pierre, M.
Grenouillet, L.
Previtali, B.
Perreau, P.
Poiroux, T.
Faynot, O.
机构：
[1] CEA Leti, MINATEC Campus, 17 Rue Martyrs, F-38054 Grenoble, France
来源：
2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews how the evolution of FDSOI planar architecture towards Trigate Nanowires leads to a natural Single Electron Transistor and Field Effect Transistor convergence at room temperature. On one hand, this convergence sets up technological specifications to preserve CMOS operation. On the other hand it opens the path to room temperature hybrid circuits based on single electron transistors and MOSFETs. Further on, single electron effects can be downscaled to the ultimate single atom transistors and we demonstrate the practical performance of electron pumps for metrologic applications.
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