Multibranch Mobility Analysis for the Characterization of FDSOI Transistors

被引：15

作者：

Navarro, Carlos ^{[1
]}

Rodriguez, Noel ^{[1
]}

Ohata, Akiko ^{[2
]}

Gamiz, Francisco ^{[1
]}

Andrieu, Francois ^{[3
]}

Fenouillet-Beranger, Claire ^{[4
]}

Faynot, Olivier ^{[3
]}

Cristoloveanu, Sorin ^{[5
]}

机构：

[1] Univ Granada, Dept Elect, E-18071 Granada, Spain

[2] Osaka City Univ, Dept Elect, Osaka 5588585, Japan

[3] CEA LETI Minatec, F-38054 Grenoble, France

[4] STMicroelect, F-38926 Crolles, France

[5] Minatec, Inst Microelect Electromagnetisme & Photon, F-38016 Grenoble, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 08期

关键词：

Effective field; mobility; SOI-MOSFETs; split C(V); ultrathin SOI; universal mobility; SI MOSFETS;

D O I：

10.1109/LED.2012.2198193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel technique for the accurate carrier mobility evaluation in ultrathin fully depleted SOI-MOSFETs is proposed. The mobility representation, obtained from the combination of Poisson-Schrodinger numerical simulations and split C(V) experimental results, discloses the mobility dependence on the effective field by accounting for the actual electric field and carrier profiles in the body of the device. As example of this technique, we show that the apparent larger mobility enhancement, due to back-gate bias, observed in thin-BOX transistors with respect to thick-BOX devices, is related to an electric field reduction rather than other technological factors.

引用

页码：1102 / 1104

页数：3

共 50 条

[31] All-operation-regime characterization and modeling of drain current variability in junctionless and inversion-mode FDSOI transistors
Bosch, D.
Colinge, J. P.
Ghibaudo, G.
Garros, X.
Barraud, S.
Lacord, J.
Sklenard, B.
Brunet, L.
Batude, P.
Fenouillet-Beranger, C.
Cluzel, J.
Kies, R.
Hartmann, J. M.
Vizioz, C.
Audoit, G.
Balestra, F.
Andrieu, F.
2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2020,
[32] Electrical characterization of FDSOI CMOS devices
Ghibaudo, G.
2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2016, : 135 - 141
[33] Electrothermal analysis of AlGaN/GaN high electron mobility transistors
Sriraaman Sridharan
Anusha Venkatachalam
P. D. Yoder
Journal of Computational Electronics, 2008, 7 : 236 - 239
[34] Electrothermal analysis of AlGaN/GaN high electron mobility transistors
Sridharan, Sriraaman
Venkatachalam, Anusha
Yoder, P. D.
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (03) : 236 - 239
[35] FDSOI Metal Gate Transistors for Ultra Low Power Subthreshold Operation
Vitale, S. A.
Kedzierski, J.
Wyatt, P. W.
Renzi, M.
Keast, C. L.
2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
[36] New insights into NBTI reliability in UTBOX-FDSOI PMOS transistors
Angot, D.
Rideau, D.
Bravaix, A.
Monsieur, F.
Randriamihaja, Y. M.
Huard, V.
2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2012, : 70 - 73
[37] Performance and reliability of strained SOI transistors for advanced planar FDSOI technology
Besnard, G.
Garros, X.
Subirats, A.
Andrieu, F.
Federspiel, X.
Rafik, M.
Schwarzenbach, W.
Reimbold, G.
Faynot, O.
Cristoloveanu, S.
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2015,
[38] New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs
Lin, Yen-Kai
Kushwaha, Pragya
Duarte, Juan Pablo
Chang, Huan-Lin
Agarwal, Harshit
Khandelwal, Sourabh
Sachid, Angada B.
Harter, Michael
Watts, Josef
Chauhan, Yogesh Singh
Salahuddin, Sayeef
Hu, Chenming
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 463 - 469
[39] On the Severity of Self-Heating in FDSOI at Cryogenic Temperatures: In-depth Analysis from Transistors to Full Processor
Kar, Anirban
Klemme, Florian
Chauhan, Yogesh Singh
Amrouch, Hussam
2024 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS 2024, 2024,
[40] Thermal simulation of and characterization of AlGaN/GaN/Si high electron mobility transistors
Hanreich, G
Bychikhin, S
Pogany, D
Marso, M
Kordos, P
Nicolics, J
2005 28TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, 2005, : 144 - 145

← 1 2 3 4 5 →