Magnetoresistance technique for mobility extraction in short channel FDSOI transistors

被引：8

作者：

Chaisantikulwat, W ^{[1
]}

Mouis, M ^{[1
]}

Ghibaudo, G ^{[1
]}

Gallon, C ^{[1
]}

Fenouillet-Beranger, C ^{[1
]}

Maude, DK ^{[1
]}

Skotnicki, T ^{[1
]}

Cristoloveanu, S ^{[1
]}

机构：

[1] UJF, IMEP, JRU, CNRS,INPG, F-38016 Grenoble, France

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the magnetoresistance technique is used to perform mobility measurements in Fully-Depleted Silicon-on-Insulator (FDSOI) MOSFETs. This technique has the advantage of allowing the measurement of carrier mobility from weak to strong inversion without the knowledge of the effective channel length. The mobility dependence on the temperature enables us to analyse the scattering mechanisms in the channel. A new method exploiting the use of magnetoresistance technique to eliminate series resistance effect from the extracted mobility is proposed. The influence of series resistance on the mobility values in weak and strong inversion is then analysed.

引用

页码：569 / 572

页数：4

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