A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner

被引：0
|
作者：
Abdollahvand, S. [1 ]
Santos-Tavares, R. [1 ]
Goes, Joao [1 ]
机构：
[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, CTS UNINOVA, Dept Eng Electrotecn & Comp, P-2829517 Caparic, Portugal
来源：
TECHNOLOGICAL INNOVATION FOR THE INTERNET OF THINGS | 2013年 / 394卷
关键词：
buffer; common-source; common-drain; RF; CMOS; low-voltage; TRANSCONDUCTOR;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source degeneration technique is used. The proposed circuit has been designed in a 130nm logic CMOS technology and it achieves a simulated gain of 1.54 dB, a bandwidth of 1.14 GHz for a total power dissipation of 13.34 mW, when driving an RF active probe (with 0.8 pF in parallel with 200 k Omega).
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页码：611 / 618
页数：8
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