A Low-Voltage CMOS Buffer for RF Applications Based on a Fully-Differential Voltage-Combiner

被引：0

作者：

Abdollahvand, S. ^{[1
]}

Santos-Tavares, R. ^{[1
]}

Goes, Joao ^{[1
]}

机构：

[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, CTS UNINOVA, Dept Eng Electrotecn & Comp, P-2829517 Caparic, Portugal

来源：

TECHNOLOGICAL INNOVATION FOR THE INTERNET OF THINGS | 2013年 / 394卷

关键词：

buffer; common-source; common-drain; RF; CMOS; low-voltage; TRANSCONDUCTOR;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a new CMOS buffer circuit topology for radio-frequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source degeneration technique is used. The proposed circuit has been designed in a 130nm logic CMOS technology and it achieves a simulated gain of 1.54 dB, a bandwidth of 1.14 GHz for a total power dissipation of 13.34 mW, when driving an RF active probe (with 0.8 pF in parallel with 200 k Omega).

引用

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页码：611 / 618

页数：8

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