Current measurement and short-circuit protection of an IGBT based on module parasitics

被引：0

作者：

Oinoneni, Markus ^{[1
]}

Laitineni, Matti ^{[1
]}

Kyyra, Jorma ^{[2
]}

机构：

[1] ABB Oy, FI-00381 Helsinki, Finland

[2] Aalto Univ, FI-00076 Espoo, Finland

来源：

2014 16TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'14-ECCE EUROPE) | 2014年

关键词：

Current sensor; IGBT; Measurement; Protection device; Short circuit; SCHEME;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, a short-circuit protection of an IGBT, based on current measurement is proposed. The IGBT collector current estimate is obtained by filtering the voltage between the auxiliary emitter and the power emitter terminals of an IGBT module. The proposed scheme utilizes a large bandwidth analog circuit which enables to the detect fault current regardless of the current slope. According to the experiments, the proposed circuit can detect faults before desaturation of the IGBT, which is a major benefit compared to the traditional methods based on IGBT saturation voltage measurement.

引用

页数：9

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