A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design

被引:12
|
作者
Cavaiuolo, D. [1 ]
Riccio, M. [1 ]
Maresca, L. [1 ]
Irace, A. [1 ]
Breglio, G. [1 ]
Dapra, D. [2 ]
Sanfilippo, C. [2 ]
Merlin, L. [2 ]
机构
[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy
[2] Vishay Intertechnol, Diodes Div, I-10071 Turin, Italy
关键词
IGBT; SPICE model; Electro-thermal; Short-circuit;
D O I
10.1016/j.microrel.2015.06.086
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliable simulation at application level. A particular emphasis to the temperature dependence of physical parameters was given for both the on-state and breakdown conditions. The model was experimentally validated in steady state and transient operation on a Field-Stop trench-gate 30A-600 V commercial IGBT device. The effectiveness of the convergence-accuracy aspects was proved for the proposed model. The application to the short-circuit protection circuit design for a hard switched fault in an inverter motor-drive application was also analysed. The ability of the proposed IGBT model was experimentally verified with a simplified-equivalent circuit where a short condition was forced on the load, enabling the desaturation protection by the IGBT driver. The results show an accurate prediction of the device electro-thermal behaviour under short-circuit conditions, with a possible optimal design of the desaturation circuit parameters when the device experiences hard-switched-fault or fault-under-load events. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1971 / 1975
页数:5
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