Raman spectroscopic study of ion-implanted and annealed silicon.

被引：0
|
作者：
Tuschel, DD [1 ]
Lavine, JP [1 ]
Russell, JB [1 ]
机构：
[1] EASTMAN KODAK CO,IMAGING RES & ADV DEV,ROCHESTER,NY 14650
来源：
DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II | 1996年 / 406卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：549 / 554
页数：6
相关论文
共 50 条
  • [21] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED LASER-ANNEALED SILICON
    YOUNG, RT
    NARAYAN, J
    WHITE, CW
    WOOD, RF
    CLELAND, JW
    WESTBROOK, RD
    MOONEY, PM
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 41 - 44
  • [22] CELL-FORMATION IN ION-IMPLANTED, LASER ANNEALED SILICON
    NARAYAN, J
    WHITE, CW
    APPLETON, BR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 203 - 203
  • [23] SIMS investigations of gettering centers in ion-implanted and annealed silicon
    Gammer, K
    Gritsch, M
    Peeva, A
    Kögler, R
    Hutter, H
    JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 2002, 20 (01): : 47 - 55
  • [24] DIRECTIONAL DISTRIBUTION OF BURGERS VECTORS OF DISLOCATION LOOPS IN ION-IMPLANTED SILICON.
    Komarov, F.F.
    Solovev, V.S.
    Shiryaev, S.YU.
    Radiation effects letters, 1981, 58 (06): : 177 - 181
  • [25] DEFECT DISTRIBUTION IN ION-IMPLANTED SILICON. A MONTE CARLO SIMULATION.
    Mazzone, A.M.
    Physica Status Solidi (A) Applied Research, 1986, 95 (01): : 149 - 154
  • [26] Raman scattering probe of ion-implanted and pulse laser annealed GaAs
    Verma, P
    Jain, KP
    Abbi, SC
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 3921 - 3926
  • [27] RAMAN-SCATTERING FROM ION-IMPLANTED SILICON
    JAIN, KP
    SHUKLA, AK
    ASHOKAN, R
    ABBI, SC
    BALKANSKI, M
    PHYSICAL REVIEW B, 1985, 32 (10): : 6688 - 6691
  • [28] Photoluminescence study of ion-implanted silicon
    Terashima, K
    Ikarashi, T
    Watanabe, M
    Kitano, T
    NEC RESEARCH & DEVELOPMENT, 1998, 39 (03): : 289 - 298
  • [29] Photoluminescence study of ion-implanted silicon
    Terashima, Koichi
    Ikarashi, Taeko
    Watanabe, Masahito
    Kitano, Tomohisa
    NEC Research and Development, 1998, 39 (03): : 289 - 298
  • [30] DEFECT STRUCTURE STUDY WITH PLANAR CHANNELING IN PULSE-ANNEALED ION-IMPLANTED SILICON
    DVURECHENSKII, AV
    KASHNIKOV, BP
    POKHIL, GP
    POPOV, VP
    TULINOV, AV
    TURINGE, AA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : K39 - K42
12345