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- [2] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED LASER-ANNEALED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 41 - 44
- [3] CHARACTERIZATION OF ION-IMPLANTED, LASER-ANNEALED SILICON FOR SOLAR-CELL APPLICATIONS [J]. TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1979, 33 (NOV): : 246 - 248
- [5] PROPERTIES OF ION-IMPLANTED, LASER ANNEALED SEMICONDUCTORS [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (02): : 106 - 106
- [9] LASER ANNEALING OF ION-IMPLANTED SILICON [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 264 - 265
- [10] LASER PROCESSING OF ION-IMPLANTED SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1686 - 1692