Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

被引：2

作者：

He, W. ^{[1
,2
,3
]}

Lu, S. L. ^{[1
]}

Jiang, D. S. ^{[3
]}

Dong, J. R. ^{[1
]}

Tackeuchi, A. ^{[4
]}

Yang, H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[4] Waseda Univ, Dept Phys, Tokyo 1698555, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 02期

关键词：

VAPOR-PHASE EPITAXY; GALLIUM-ARSENIDE; SOLAR-CELLS; GAAS; HETEROSTRUCTURES; DIFFUSION;

D O I：

10.1063/1.4737611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge-(Ga,Ge-In)-V-(Ga,V-In)] complexes. A strong evidence to support the existence of [Ge-(Ga,Ge-In)-Si-(Ga,Si-In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge-(Ga,Ge-In)-V-(Ga,V-In)] and [Ge-(Ga,Ge-In)-Si-(Ga,Si-In)] complexes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737611]

引用

页数：3

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