Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge-(Ga,Ge-In)-V-(Ga,V-In)] complexes. A strong evidence to support the existence of [Ge-(Ga,Ge-In)-Si-(Ga,Si-In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge-(Ga,Ge-In)-V-(Ga,V-In)] and [Ge-(Ga,Ge-In)-Si-(Ga,Si-In)] complexes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737611]