A combined gate replacement and input vector control approach for leakage current reduction

被引:48
|
作者
Yuan, L [1 ]
Qu, G
机构
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
[2] Univ Maryland, Inst Adv Comp Studies, College Pk, MD 20742 USA
关键词
gate replacement; leakage reduction; minimum leakage vector (MLV);
D O I
10.1109/TVLSI.2005.863747
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Input vector control (IVC) is a popular technique for leakage power reduction. It utilizes the transistor stack effect in CMOS gates by applying a minimum leakage vector (MLV) to the primary inputs of combinational circuits during the standby mode. However, the IVC technique becomes less effective for circuits of large logic depth because the input vector at primary inputs has little impact on leakage of internal gates at high logic levels. In this paper, we propose a technique to overcome this limitation by replacing those internal gates in their worst leakage states by other library gates while maintaining the circuit's correct functionality during the active mode. This modification of the circuit does not require changes of the design flow, but it opens the door for further leakage reduction when the MLV is not effective. We then present a divide-and-conquer approach that integrates gate replacement, an optimal MLV searching algorithm for tree circuits, and a genetic algorithm to connect the tree circuits. Our experimental results on all the MCNC91 benchmark circuits reveal that 1) the gate replacement technique alone can achieve 10% leakage current reduction over the best known IVC methods with no delay penalty and little area increase; 2) the divide-and-conquer approach outperforms the best pure IVC method by 24% and the existing control point insertion method by 12%; and 3) compared with the leakage achieved by optimal MLV in small circuits, the gate replacement heuristic and the divide-and-conquer approach can reduce on average 13% and 17% leakage, respectively.
引用
收藏
页码:173 / 182
页数:10
相关论文
共 50 条
  • [41] Anomalous leakage current reduction by ramping rate control in MeV implantation
    Hamada, K
    Nishio, N
    Saito, S
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 739 - 743
  • [42] InP hot electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current
    Takeuchi, K
    Maeda, H
    Nakagawa, R
    Miyamoto, Y
    Furuya, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2A): : L183 - L186
  • [43] Simultaneous control of subthreshold and gate leakage current in nanometer-scale CMOS circuits
    Shin, Youngsoo
    Heo, Sewan
    Kim, Hyung-Ock
    Choi, Jung Yun
    PROCEEDINGS OF THE ASP-DAC 2007, 2007, : 654 - +
  • [44] Minimum leakage vector with sparse power gating - A Combinational approach for standby leakage power reduction in CMOS circuits
    Udayanga, G. W. G. K. N.
    Thayaparan, S.
    2019 4TH IEEE INTERNATIONAL CIRCUITS AND SYSTEMS SYMPOSIUM (ICSYS), 2019,
  • [45] A Simultaneous Input Vector Control and Circuit Modification Technique to Reduce Leakage with Zero Delay Penalty
    Jayakumar, Nikhil
    Khatri, Sunil P.
    ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS, 2010, 16 (01)
  • [46] Reduction of the Gate Leakage Current in Binary-trench-insulated Gate AlGaN/GaN High-electron-mobility Transistors
    Kim, Su Jin
    Kim, Doug Ho
    Kim, Jae Moo
    Jung, Kang Min
    Kim, Tae Geun
    Choi, Hong Goo
    Hahn, Cheol-Koo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (01) : 356 - 361
  • [47] Application of JVD nitride gate dielectric to a 0.35micron CMOS process for reduction of gate leakage current and boron penetration
    Tseng, HH
    Tsui, PGY
    Tobin, PJ
    Mogab, J
    Khare, M
    Wang, XW
    Ma, TP
    Hegde, R
    Hobbs, C
    Veteran, J
    Hartig, M
    Kenig, G
    Wang, V
    Blumenthal, R
    Cotton, R
    Kaushik, V
    Tamagawa, T
    Halpern, BL
    Cui, GJ
    Schmitt, JJ
    INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, : 647 - 650
  • [48] Combined subthreshold and gate-oxide leakage power reduction in deep-submicron CMOS circuits
    Guindi, RS
    ICEEC'04: 2004 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONIC AND COMPUTER ENGINEERING, PROCEEDINGS, 2004, : 535 - 540
  • [49] LEakage Control TRAnsistor (LECTRA): A novel Approach for Leakage Reduction in Low Power VLSI Design
    Kassa, Sankit R.
    Nagaria, R. K.
    JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES, 2016, 11 (01): : 53 - 77
  • [50] Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs
    陈万军
    张竞
    张波
    陈敬
    JournalofSemiconductors, 2013, 34 (02) : 37 - 40