Impact of Doping Density on Junctionless Gate Stack FD-SOI MOSFET for Analog/RF Application

This paper examine the impact of Double Doped Layer Gate Stack Junctionless (DDL-GSJL) MOSFET and Highly Doped Source Drain Gate Stack Junctionless (HDSD-GSJL) MOSFET. We compare the performance of proposed MOSFET, with uniformly doped conventional junctionless MOSFET. The proposed MOSFET has no pn junction, only n-type non-uniform doping is used. Non-uniform doping is distributed in a horizontal and vertical manner. A high-k material (Si3N4) is used as gate stack to control the leakage current and increase the I-ON/IOFF. This paper present analog and RF figure of merits (FOM). In the paper major FOMs, output conductance (g(d)), transconductance (g(m)), cut-off frequency (f(T)), transconductance frequency product (TFP) is analyzed. The simulated results reflect that HDSD-GSJL MOSFET exhibit high transconductance, high cut-off frequency and high transconductance frequency product. The structure is designed and analyzed using ATLAS 2D TCAD tools.