High Performance MoS2 N-Channel MOSFFTs

In this paper, we have demonstrated high performance back-gated MoS2 MOSFETs with scandium (Sc) contact and high-k ZrO2 dielectrics for improved contact resistance and electron mobility. Record drain current of 200 pAiiim has been achieved for 1-mu m channel length multilayer MoS2 MOSFETs on ZrO2/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS2 with strong gating effect on source region is significantly decreased to 0.9 k Omega.mu m. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm(2)/Vs, 3 times higher than SiO2 substrate, originating from the significant screening effect of high-k ZrO2 dielectrics on the impurity scattering.