Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

被引：0
|
作者：
Tiginyanu, IM [1 ]
Miao, J [1 ]
Hartnagel, HL [1 ]
Ruck, D [1 ]
Tinschert, K [1 ]
Ursaki, VV [1 ]
Ichizli, VM [1 ]
机构：
[1] TH DARMSTADT,INST HOCHFREQUENZTECH,D-64283 DARMSTADT,GERMANY
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：598 / 601
页数：4
相关论文
共 50 条
  • [31] RAMAN-SPECTROSCOPY FOR CHARACTERIZATION OF ANNEALING OF ION-IMPLANTED INP
    MYERS, DR
    GOURLEY, PL
    VAIDYANATHAN, KV
    DUNLAP, HL
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 635 - 640
  • [32] Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer
    Reddy, V. Rajagopal
    THIN SOLID FILMS, 2014, 556 : 300 - 306
  • [33] ELECTRICAL-PROPERTIES AND POSITRON-ANNIHILATION IN NEUTRON-IRRADIATED N-INP
    BRUDNYI, VN
    CHARCHENKO, VA
    KOLIN, NG
    NOVIKOV, VA
    POGREBNYAK, AD
    RUZIMOV, SM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (01): : 195 - 200
  • [34] Electrical Properties and the Role of Inhomogeneities at the Polyvinyl Alcohol/n-InP Schottky Barrier Interface
    Reddy, M. Siva Pratap
    Kang, Hee-Sung
    Lee, Jung-Hee
    Reddy, V. Rajagopal
    Jang, Ja-Soon
    JOURNAL OF APPLIED POLYMER SCIENCE, 2014, 131 (02)
  • [35] Characterization of MOVPE-grown p-InGaAs/n-InP interfaces
    Uchida, Kazuo
    Yamato, Hidenori
    Tomioka, Yoshikuni
    Koizumi, Atsushi
    Nozaki, Shinji
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (16) : 4011 - 4015
  • [36] SILICON-IMPLANTED THERMALLY-ANNEALED N-INP LAYERS FOR MICROWAVE-POWER MISFETS
    LIU, SG
    GARDNER, PD
    NARAYAN, SY
    KLATSKIN, JB
    COLVIN, SD
    FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 566 - 574
  • [37] New bulk and surface phonon-plasmon modes in Raman spectra of porous n-InP
    Denisov, V.N.
    Mavrin, B.N.
    Karavanskii, V.A.
    Physics Letters, Section A: General, Atomic and Solid State Physics, 1999, 259 (01): : 62 - 66
  • [38] Investigations on H+ and He+ implantation effects in n-InP using Raman scattering
    Dharmarasu, N
    Sundarakkannan, B
    Kesavamoorthy, R
    Nair, KGM
    Kumar, J
    PHYSICA B, 1999, 262 (3-4): : 329 - 335
  • [39] New bulk and surface phonon-plasmon modes in Raman spectra of porous n-InP
    Denisov, VN
    Mavrin, BN
    Karavanskii, VA
    PHYSICS LETTERS A, 1999, 259 (01) : 62 - 66
  • [40] Investigations on H+ and He+ implantation effects in n-InP using Raman scattering
    Dharmarasu, N.
    Sundarakkannan, B.
    Kesavamoorthy, R.
    Nair, K.G.M.
    Kumar, J.
    Physica B: Condensed Matter, 1999, 262 (03): : 329 - 335
12345