Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

被引：0
|
作者：
Tiginyanu, IM [1 ]
Miao, J [1 ]
Hartnagel, HL [1 ]
Ruck, D [1 ]
Tinschert, K [1 ]
Ursaki, VV [1 ]
Ichizli, VM [1 ]
机构：
[1] TH DARMSTADT,INST HOCHFREQUENZTECH,D-64283 DARMSTADT,GERMANY
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：598 / 601
页数：4
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