共 50 条
- [1] RAMAN-SPECTROSCOPY OF ION-IMPLANTED GRAPHITE [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (01): : 60 - 60
- [2] ANNEALING BEHAVIOR OF ION-IMPLANTED FE IN INP [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1698 - 1700
- [3] PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP [J]. APPLIED PHYSICS LETTERS, 1979, 35 (08) : 631 - 633
- [4] STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED HOPG AND GLASS-LIKE CARBON BY LASER RAMAN-SPECTROSCOPY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 1489 - 1493
- [5] Raman spectroscopy of ion-implanted silicon [J]. MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 143 - 148
- [6] Raman spectroscopy of ion-implanted silicon [J]. MICROSTRUCTURE EVOLUTION DURING IRRADIATION, 1997, 439 : 47 - 52
- [7] THE EFFECTS OF ANNEALING ON DISORDER PRESERVATION IN ION-IMPLANTED INP [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 422 - 426
- [8] A COMPREHENSIVE STUDY OF DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED INP [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 429 - 432
- [9] CLOSE-CONTACT ANNEALING OF ION-IMPLANTED GAAS AND INP [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 927 - 929
- [10] Characterization of ion-implanted silica glass by micro-photoluminescence and Raman spectroscopy [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 210 : 277 - 280