Superluminescent diodes using quantum dots superlattice

被引：13
|
作者：
Dimas, CE [1 ]
Djie, HS [1 ]
Ooi, BS [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 288卷 / 01期
关键词：
quantum dot; superluminescent diodes; III-V materials;
D O I：
10.1016/j.jcrysgro.2005.12.043
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 mu m wide) butt-connected to a broad-area photon absorber (50 mu m wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (< 0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 degrees C) at 105 mA current injection. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：153 / 156
页数：4
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