Superluminescent diodes using quantum dots superlattice

被引：13
|
作者：
Dimas, CE [1 ]
Djie, HS [1 ]
Ooi, BS [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 288卷 / 01期
关键词：
quantum dot; superluminescent diodes; III-V materials;
D O I：
10.1016/j.jcrysgro.2005.12.043
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We report a broadband superluminescence diode using InGaAs/GaAs self-assembled quantum dots structure grown by atomic layer molecular beam epitaxy. This two-section SLD consists of weakly guided-rib-waveguide gain section (4 mu m wide) butt-connected to a broad-area photon absorber (50 mu m wide) to minimize optical feedback and to suppress lasing action. The fabricated device produces a low ripple spectrum (< 0.3 dB) with a spectral bandwidth of 135 nm at a peak wavelength of 1210 nm under continuous wave operation (20 degrees C) at 105 mA current injection. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：153 / 156
页数：4
相关论文
共 50 条
  • [31] Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells
    Wu, BR
    Lin, CF
    Laih, LW
    Shih, TT
    OPTOELECTRONIC INTERCONNECTS VIII, 2001, 4292 : 172 - 181
  • [32] Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes
    Liang De-Chun
    An Qi
    Jin Peng
    Li Xin-Kun
    Wei Heng
    Wu Ju
    Wang Zhan-Guo
    CHINESE PHYSICS B, 2011, 20 (10)
  • [33] Superluminescent diodes based on asymmetric double quantum-well heterostructures
    Ilchenko, Stepan N.
    Pankratov, Kirill M.
    Shidlovsky, Vladimir R.
    Yakubovich, Sergey D.
    2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019,
  • [34] Quantum dot superluminescent diodes - Bandwidth engineering and epitaxy for high powers
    Choi, T. L.
    Ray, S. K.
    Zhang, Z.
    Childs, D.
    Groom, K. M.
    Stevens, B. J.
    Liu, H.
    Hopkinson, M.
    Hogg, R. A.
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 289 - 292
  • [35] A novel application to quantum dot materials to the active region of superluminescent diodes
    Zhang, ZY
    Meng, XQ
    Jin, P
    Li, CM
    Qu, SC
    Xu, B
    Ye, XL
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2002, 243 (01) : 25 - 29
  • [36] Wavelength characteristics of chirped quantum dot superluminescent diodes for broad spectrum
    Bae, HC
    Park, HL
    You, YC
    Han, IK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 48 (04) : 620 - 623
  • [37] High power broadband InGaAs/GaAs quantum dot superluminescent diodes
    Heo, DC
    Song, JD
    Choi, WJ
    Lee, JI
    Jung, JC
    Han, IK
    ELECTRONICS LETTERS, 2003, 39 (11) : 863 - 865
  • [38] Hybrid coherent light: modeling broadband quantum dot superluminescent diodes
    Friedrich, Franziska
    Walser, Reinhold
    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2017,
  • [39] Superluminescent diodes based on asymmetric double-quantum-well heterostructures
    Andreeva, E., V
    Ilchenko, S. N.
    Ladugin, M. A.
    Marmalyuk, A. A.
    Pankratov, K. M.
    Shidlovskii, V. R.
    Yakubovich, S. D.
    QUANTUM ELECTRONICS, 2019, 49 (10) : 931 - 935
  • [40] Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes
    梁德春
    安琪
    金鹏
    李新坤
    魏恒
    吴巨
    王占国
    Chinese Physics B, 2011, 20 (10) : 486 - 490
12345