Self-aligned double patterning for vacuum electronic device fabrication

被引：0
|
作者：
Koch, Andrew T. [1 ]
Lingley, Andrew R. [1 ]
Mankin, Max N. [1 ]
Pan, Tony S. [1 ]
机构：
[1] Modern Elect, Bellevue, WA 98007 USA
来源：
2016 29TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2016年
关键词：
self-aligned double patterning; low fill factor grid; low-loss grid; field emission heat engine; vacuum nanoelectronics; nanofabrication; microfabrication;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We developed a fabrication process that incorporates self-aligned double patterning to produce nanoscale electrostatic grids in close proximity to an electrode. These nanoscale grids can be used to mitigate the effects of space charge in the inter-electrode region of a thermionic converter and thereby improve conversion efficiency. The nanoscale dimensions and low fill factor of the grid help to prevent loss by limiting detrimental electron absorption. Compared to other advanced lithographic techniques used to pattern nanoscale features with similar, sub-100 nm dimensions, self-aligned double patterning is cost-effective, wafer-scale, and allows for rapid prototype iteration.
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页数：2
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