Temperature Dependence of Carrier Transport of a Silicon Nanowire Schottky-Barrier Field-Effect Transistor

被引：20

作者：

Yang, W. F. ^{[1
]}

Lee, S. J. ^{[1
]}

Liang, G. C. ^{[1
]}

Eswar, R. ^{[1
]}

Sun, Z. Q. ^{[1
]}

Kwong, D. L. ^{[1
]}

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2008年 / 7卷 / 06期

关键词：

Barrier height; carrier injection; Schottky-barrier (SB) MOSFET; silicon nanowire (SiNW); temperature dependence;

D O I：

10.1109/TNANO.2008.2003353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, temperature dependence of the characteristics of a silicon nanowire (SiNW) Schottky-barrier (SB) MOSFET device has been investigated in detail. Palladium or titanium source and drain SiNW MOSFETS integrated with an Al2O3/TaN/Ta gate stack have been fabricated and characterized at different temperatures. Results show that SB SiNW MOSFETS Operate with different principles, compared to conventional MOSFETS. From the In, and transconductance variation with temperature, it is found that the device operation is dominated by carrier injection at the interface of the source and channel rather than the carrier transport inside the NW channel. Furthermore, this carrier injection is determined by the competition between SB tunneling and thermionic emission. Therefore, the SB height and width play an important role in SB SiNW MOSFET operation, and effective barrier height has been extracted based on I-DS-V-GS characteristics at different temperatures. In addition, the profile of SB at the source/channel interface was analyzed with a qualitative analysis of the subthreshold swing.

引用

页码：728 / 732

页数：5

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