Transport properties in C60 field-effect transistor with a single Schottky barrier

被引：1
|
作者：
Ohta, Yohei [1 ]
Kubozono, Yoshihiro [1 ]
Fujiwara, Akihiko [2 ]
机构：
[1] Okayama Univ, Surface Sci Res Lab, Okayama 7008530, Japan
[2] Japan Adv Inst Sci & Technol, Ishikawa 9231292, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期
关键词：
D O I：
10.1063/1.2919799
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
C-60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier. (c) 2008 American Institue of Physics.
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页数：3
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