Electronic transport in sub-micron square area organic field-effect transistors

被引：1
|
作者：
Golmar, F. [1 ,2 ]
Stoliar, P. [1 ,3 ,4 ]
Gobbi, M. [1 ]
Casanova, F. [1 ,5 ]
Hueso, L. E. [1 ,5 ]
机构：
[1] CIC NanoGUNE Consolider, Donostia San Sebastian 20018, Basque Country, Spain
[2] INTI CONICET, San Martin, Bs As, Argentina
[3] Univ Paris 11, LPS, CNRS UMR 8502, F-91405 Orsay, France
[4] Univ Nacl San Martin, ECyT, RA-1650 San Martin, Argentina
[5] Basque Fdn Sci, IKERBASQUE, Bilbao 48011, Basque Country, Spain
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期
基金：
欧盟第七框架计划;
关键词：
THIN-FILM TRANSISTORS; CHANNEL; DIELECTRICS; INJECTION; DEVICES; ARRAYS;
D O I：
10.1063/1.4795014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Scaling down organic field effect transistors to channel areas well below the micron square could improve positively its speed and integration capabilities. Here, we report a careful study of the electronic carrier transport for such nanoscale devices. In particular, we explore the validity of standard analysis for parameters extraction in this size regime. We also study the effect of the large longitudinal electric field and fringe currents, especially their influence on the ON/OFF ratio. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795014]
引用
收藏
页数：5
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