Electronic transport in sub-micron square area organic field-effect transistors

被引：1

作者：

Golmar, F. ^{[1
,2
]}

Stoliar, P. ^{[1
,3
,4
]}

Gobbi, M. ^{[1
]}

Casanova, F. ^{[1
,5
]}

Hueso, L. E. ^{[1
,5
]}

机构：

[1] CIC NanoGUNE Consolider, Donostia San Sebastian 20018, Basque Country, Spain

[2] INTI CONICET, San Martin, Bs As, Argentina

[3] Univ Paris 11, LPS, CNRS UMR 8502, F-91405 Orsay, France

[4] Univ Nacl San Martin, ECyT, RA-1650 San Martin, Argentina

[5] Basque Fdn Sci, IKERBASQUE, Bilbao 48011, Basque Country, Spain

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 10期

基金：

欧盟第七框架计划;

关键词：

THIN-FILM TRANSISTORS; CHANNEL; DIELECTRICS; INJECTION; DEVICES; ARRAYS;

D O I：

10.1063/1.4795014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scaling down organic field effect transistors to channel areas well below the micron square could improve positively its speed and integration capabilities. Here, we report a careful study of the electronic carrier transport for such nanoscale devices. In particular, we explore the validity of standard analysis for parameters extraction in this size regime. We also study the effect of the large longitudinal electric field and fringe currents, especially their influence on the ON/OFF ratio. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795014]

引用

页数：5

共 50 条

[21] Organic field-effect transistors
Horowitz, G
ADVANCED MATERIALS, 1998, 10 (05) : 365 - 377
[22] Organic field-effect transistors
Malachowski, M. J.
Zmija, J.
OPTO-ELECTRONICS REVIEW, 2010, 18 (02) : 121 - 136
[23] Sub-Micron Gate Length Field Effect Transistors as Broad Band Detectors of Terahertz Radiation
Delgado Notario, J. A.
Javadi, E.
Calvo-Gallego, J.
Diez, E.
Velazquez, J. E.
Meziani, Y. M.
Fobelets, K.
FUNDAMENTAL AND APPLIED PROBLEMS OF TERAHERTZ DEVICES AND TECHNOLOGIES, 2017, 58 : 87 - 95
[24] Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors
Cosseddu, P.
Milita, S.
Bonfiglio, A.
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (01) : 113 - 115
[25] Organic field-effect transistors for spin-polarized transport
Michelfeit, M.
Schmidt, G.
Geurts, J.
Molenkamp, L. W.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (03): : 656 - 663
[26] Contact resistance in sub-micron and nanoscale organic thin-film transistors
Wang, Xiao
McCulley, Calla M.
Liang, Kelly
Wang, Liang
Xu, Xin
Dodabalapur, Ananth
ORGANIC ELECTRONICS, 2022, 109
[27] Inverse square-root field dependence of conductivity in organic field-effect transistors
Wei, J. H.
Gao, Y. L.
Wang, X. R.
APPLIED PHYSICS LETTERS, 2009, 94 (07)
[28] Study of Electronic Synaptic Characteristics in PVA Organic Field-Effect Transistors
Zhang, Xuzhao
Li, Bingshuo
Wang, Haiting
Ding, Qian
Gao, Shujing
JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (08) : 5307 - 5314
[29] Organic heterostructures in organic field-effect transistors
Wang, Haibo
Yan, Donghang
NPG ASIA MATERIALS, 2010, 2 (02) : 69 - 78
[30] Organic heterostructures in organic field-effect transistors
Haibo Wang
Donghang Yan
NPG Asia Materials, 2010, 2 : 69 - 78

← 1 2 3 4 5 →