Back-gate forward bias method for low-voltage CMOS digital circuits

被引:33
|
作者
Chen, MJ
Ho, JS
Huang, TH
Yang, CH
Jou, YN
Wu, T
机构
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN
[2] ITRI,ELECT RES & SERV ORG,MIXED MODE INTEGRATED CIRCUITS DEPT,HSINCHU 300,TAIWAN
关键词
D O I
10.1109/16.502122
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The back-gate forward bias method suitable for present standard hulk CMOS processes has been promoted for low-voltage digital circuit application, A CMOS inverter employing the method has experimentally exhibited the ability of electrically adjusting the transition region of the de voltage transfer characteristics. Transient measurement has further shown that the inverter with a back-gate forward bias of 0.4 V can operate at low supply voltages down to 0.6 V without significant loss in switching speed, Guidelines for ensuring proper implementation of tile method in a bulk CMOS process has been set up against latch-up, parasitic bipolar, impact ionization, and stand-by current, Following these guidelines, a cost-effective low-power, low-voltage, high-density mixed-mode CMOS analog/digital integrated circuits chip with both reasonable speed and improved precision has been projected for the first time.
引用
收藏
页码:904 / 910
页数:7
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