Dynamic back bias CMOS driver for low-voltage applications

被引：4
|
作者：
Moisiadis, Y [1 ]
Bouras, I
Arapoyanni, A
机构：
[1] Univ Athens, Dept Informat, Div Commun & Signal Proc, Athens 15784, Greece
[2] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 02期
关键词：
D O I：
10.1049/el:20000185
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high performance CMOS driver scheme for low-voltage applications is proposed. The threshold voltage of the MOS devices is electrically controlled in order to achieve high-speed operation dulling the transitions without increasing the static power dissipation. The V-TH control scheme has been applied to the pull-up section of the driver and simulations at 0.9V and at 50MHz have shown that the proposed driver exhibits a speed advantage of 40% during pull-up transitions over a conventional CMOS driver, without leading to a serious increase in the power dissipation.
引用
收藏
页码：135 / 136
页数：2
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