Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication

被引：171
|
作者：
Halbwax, M. [1 ]
Sarnet, T. [1 ]
Delaporte, Ph. [1 ]
Sentis, A. [1 ]
Etienne, H. [2 ]
Torregrosa, F. [2 ]
Vervisch, V. [2 ]
Perichaud, I. [3 ]
Martinuzzi, S. [3 ]
机构：
[1] CNRS, Lab LP3, UMR 6182 Luminy, F-13009 Marseille, France
[2] IBS, F-13790 Peynier, France
[3] Univ Aix Marseille 3, CNRS, UMR 6122, Lab TECSEN,Fac Sci Tech St Jerome, F-13397 Marseille 20, France
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 20期
关键词：
nanotexturization; black silicon; photocurrent; femtosecond laser; plasma immersion doping;
D O I：
10.1016/j.tsf.2007.12.117
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have prepared absorbing structures for photovoltaic cells with different nanotexturization, obtained by means of a femtosecond laser,without the use of corrosive gas (under vacuum). To take in account the 3D structured front surface, the emitter doping has been realized by using Plasma Immersion Ion Implantation (so-called PULSION). The results show a photocurrent increase of about 30% in the laser textured zones. (c) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：6791 / 6795
页数：5
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