Fabrication of Micro-Grooves in Silicon Carbide Using Femtosecond Laser Irradiation and Acid Etching

被引：14
|
作者：
Khuat Vanthanh [1 ,2 ,3 ]
Ma Yun-Can [1 ,2 ]
Si Jin-Hai [1 ,2 ]
Chen Tao [1 ,2 ]
Chen Feng [1 ,2 ]
Hou Xun [1 ,2 ]
机构：
[1] Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Shaanxi Key Lab Informat Photon Tech, Xian 710049, Peoples R China
[3] Le Quy Don Tech Univ, Hanoi, Vietnam
来源：
CHINESE PHYSICS LETTERS | 2014年 / 31卷 / 03期
基金：
中国国家自然科学基金;
关键词：
MEMS; GAS; FILMS;
D O I：
10.1088/0256-307X/31/3/037901
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A simple method using an 800-nm femtosecond laser and chemical selective etching is developed for fabrication of high-aspect-ratio grooves in silicon carbide. Micro grooves with an aspect ratio of approximately 40 are obtained. The morphology and chemical compositions of the grooves are analyzed using a scanning electronic microscope equipped with an energy dispersive x-ray spectroscopy. The formation mechanism of SiC grooves is attributed to the chemical reactions of the laser induced structural changes with a mixed solution of hydrofluoric acid and nitric acid. In addition, the effects of laser irradiation parameters on the aspect ratio of the grooves are investigated.
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页数：4
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