High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

被引：3
|
作者：
Kuo, CH [1 ]
Lin, CH
Thang, CH
Pei, SS
Zhou, YC
机构：
[1] Appl Optoelect Inc, Sugar Land, TX 77478 USA
[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA
[3] Univ Houston, ECE Dept, Houston, TX 77204 USA
[4] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 17期
关键词：
D O I：
10.1049/el:19990966
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-power mid-infra-red type II quantum-well lasers directly grown on compliant universal substrate with a lasing wavelength of 3.9 mu m at SOK have been realised. A peak output power of > 320mW per facet and differential quantum efficiency (DQE) of 7.2% are observed.
引用
收藏
页码：1468 / 1469
页数：2
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