High-power optically pumped type-II quantum-well lasers

被引：0

作者：

McDaniel, DL ^{[1
]}

Moeller, C ^{[1
]}

Falcon, M ^{[1
]}

Murry, SJ ^{[1
]}

Lin, CH ^{[1
]}

Yang, RQ ^{[1
]}

Pei, SS ^{[1
]}

Gianardi, DM ^{[1
]}

Yan, C ^{[1
]}

Ongstad, A ^{[1
]}

机构：

[1] USAF, Res Lab, Semicond Laser Branch, Kirtland AFB, NM 87117 USA

来源：

IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II | 1998年 / 3284卷

关键词：

semiconductor laser infrared; type-II quantum well; optical pumping; power efficiency; diode pumping;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 mu m, optically pumped by a pulsed 2-mu m Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm(2) at 300 K, with a characteristic temperature T-0 of 61.6 K for temperatures up to 300 K We have also studied another type-II QW laser using 0.808-mu m pumping sources with a much longer pulse length of 50 mu s. The devices demonstrated a maximum output power of 1.6 W per facet at 83 K, with a corresponding differential external quantum efficiency of 24.8%.

引用

页码：285 / 293

页数：9

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