High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

被引：3

作者：

Kuo, CH ^{[1
]}

Lin, CH

Thang, CH

Pei, SS

Zhou, YC

机构：

[1] Appl Optoelect Inc, Sugar Land, TX 77478 USA

[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

[3] Univ Houston, ECE Dept, Houston, TX 77204 USA

[4] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 17期

关键词：

D O I：

10.1049/el:19990966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power mid-infra-red type II quantum-well lasers directly grown on compliant universal substrate with a lasing wavelength of 3.9 mu m at SOK have been realised. A peak output power of > 320mW per facet and differential quantum efficiency (DQE) of 7.2% are observed.

引用

页码：1468 / 1469

页数：2

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