High-temperature mid-IR type-II quantum well lasers

被引:0
|
作者
Meyer, JR
Felix, CL
Malin, JI
Vurgaftman, I
Hoffman, CA
Lin, CH
Chang, PC
Murry, SJ
Yang, RQ
Pei, SS
RamMohan, LR
机构
关键词
mid-IR; type-II quantum wells; Auger recombination; interband cascade laser;
D O I
10.1117/12.273800
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A series of optically-pumped type-II quantum well lasers with emission wavelengths between 3.2 mu m and 4.5 mu m have displayed stimulated emission up to ambient operating temperatures. The 4-constituent design combines the advantages of excellent carrier confinement, potential for significant Auger suppression, and a 2D density-of-states for both electrons and holes. For a device emitting at 4.5 mu m, the characteristic temperature was 41 K and a peak output power exceeding 2 W/facet was observed at 200 K. Auger coefficients extracted from the threshold pump intensity confirm that Auger losses at 300 K were suppressed by at least a factor of two. We also discuss modeling results for a type-II interband cascade laser structure which is predicted to yield much higher output powers and operating temperatures than conventional bipolar diode lasers, as well as lower threshold currents than the intersubband quantum cascade laser.
引用
收藏
页码:309 / 320
页数:12
相关论文
共 50 条
  • [1] Mid-IR type-II diode lasers
    Bewley, WW
    Vurgaftman, I
    Felix, CL
    Aifer, EH
    Meyer, JR
    Lin, CH
    Zhang, D
    Murry, SJ
    Pei, SS
    Ram-Mohan, LR
    [J]. IN-PLANE SEMICONDUCTOR LASERS: FROM ULTRAVIOLET TO MID-INFRARED II, 1998, 3284 : 294 - 305
  • [2] Mid-IR type-II quantum well and quantum cascade lasers for remote chemical sensing applications
    Pei, SS
    Lin, CH
    Yang, RQ
    Murry, S
    Zhang, D
    [J]. SPACE TECHNOLOGY AND APPLICATIONS INTERNATIONAL FORUM, PTS 1-3: 1ST CONFERENCE ON FUTURE SCIENCE & EARTH SCIENCE MISSIONS; 1ST CONFERENCE ON SYNERGISTIC POWER & PROPULSION SYSTEMS TECHNOLOGY; 1ST CONFERENCE ON APPLICATIONS OF THERMOPHYSICS IN MICROGRAVITY; 2ND CONFERENCE ON COMMERCIAL DEVELOPMENT OF SPACE; - 2ND CONFERENCE ON NEXT GENERATION LAUNCH SYSTEMS; 14TH SYMPOSIUM ON SPACE NUCLEAR POWER AND PROPULSION, 1997, (387): : 837 - 842
  • [3] Optically pumped mid-IR type II quantum well lasers
    Malin, JI
    Meyer, JR
    Felix, CL
    Lindle, JR
    Goldberg, L
    Hoffman, CA
    Bartoli, FJ
    Lin, CH
    Chang, PC
    Murry, SJ
    Yang, RQ
    Pei, SS
    [J]. LASER DIODES AND APPLICATIONS II, 1996, 2682 : 257 - 266
  • [4] Mid-IR type-I and type-II quantum cascade lasers
    Hwang, WY
    Lin, CH
    Zaitsev, SV
    Um, J
    Ren, HW
    Gmachl, C
    Hutchinson, AL
    Capasso, F
    [J]. 2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, : 69 - 70
  • [5] Mid-IR Type-II Interband Cascade Lasers
    Vurgaftman, Igor
    Bewley, William W.
    Canedy, Chadwick L.
    Kim, Chul Soo
    Kim, Mijin
    Lindle, J. Ryan
    Merritt, Charles D.
    Abell, Joshua
    Meyer, Jerry R.
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (05) : 1435 - 1444
  • [6] Mid-IR type-II interband cascade lasers and their applications
    Yang, RQ
    Hill, CJ
    Christensen, LE
    Webster, CR
    [J]. SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES, 2005, 5624 : 413 - 422
  • [7] Advances in mid-IR antimonide type-II W lasers
    Bewley, WW
    Felix, CL
    Vurgaftman, I
    Bartolo, RE
    Lindle, JR
    Canedy, CL
    Meyer, JR
    Turner, GW
    Manfra, MJ
    Lee, H
    Martinelli, RU
    [J]. 2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 504 - 507
  • [8] Modeling of mid-IR type-II interband cascade lasers
    Mu, YM
    Lin, CH
    Pei, SS
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 345 - 352
  • [9] Mid-IR type-II InAs/GaInSb interband cascade lasers
    Bradshaw, JL
    Yang, RQ
    Bruno, JD
    Pham, JT
    Wortman, DE
    [J]. IN-PLANE SEMICONDUCTOR LASERS IV, 2000, 3947 : 129 - 135
  • [10] Some issues in mid-IR type-II interband cascade lasers
    Yang, RQ
    Mu, YM
    [J]. IN-PLANE SEMICONDUCTOR LASERS III, 1999, 3628 : 104 - 112