Electrothermal Model of SiC Power BJT

被引：8

作者：

Patrzyk, Joanna ^{[1
]}

Bisewski, Damian ^{[1
]}

Zarebski, Janusz ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland

来源：

ENERGIES | 2020年 / 13卷 / 10期

关键词：

BJT; modelling; self-heating; silicon carbide; SPICE; SEMICONDUCTOR-DEVICES;

D O I：

10.3390/en13102617

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel-Poon model, but several modifications were made including the improved current gain factor (beta) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.

引用

页数：9

共 50 条

[41] An electrothermal compact model of SiC MOSFETs for analyzing avalanche failure mechanisms
Shimozato, Kyohei
Nakamura, Yohei
Bian, Song
Sato, Takashi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2021, 60 (SB)
[42] A Wavelet Based Method for Modeling and Simulation of a SiC BJT
Lv, Xiuting
Tan, Pingan
2014 INTERNATIONAL ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), 2014, : 1148 - 1153
[43] Power CoolMOS transistor electrothermal model for PSpice simulation
Sara Laafar
Asmaa Maali
Kamal Baraka
Najib Boumaaz
Abdallah Soulmani
Analog Integrated Circuits and Signal Processing, 2022, 110 : 375 - 383
[44] Power CoolMOS transistor electrothermal model for PSpice simulation
Laafar, Sara
Maali, Asmaa
Baraka, Kamal
Boumaaz, Najib
Soulmani, Abdallah
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2022, 110 (03) : 375 - 383
[45] Electrothermal Model of Power IGBT Module for Circuit Simulations
Pribytny, P.
Chvala, A.
Marek, J.
Donoval, D.
2020 13TH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS (ASDAM 2020), 2020, : 96 - 99
[46] Electrothermal analysis of SiC power devices using physically-based device simulation
Lades, M
Wachutka, G
SOLID-STATE ELECTRONICS, 2000, 44 (02) : 359 - 368
[47] Cell geometry optimization of 4H-SiC power UMOSFETs by electrothermal simulation
Univ of Newcastle upon Tyne, Newcastle upon Tyne, United Kingdom
Solid State Electron, 3 (515-520):
[48] Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation
Wright, NG
Johnson, CM
O'Neill, AG
SOLID-STATE ELECTRONICS, 1999, 43 (03) : 515 - 520
[49] Electrothermal Modeling, Simulation, and Electromagnetic Characterization of a 3.3 kV SiC MOSFET Power Module
Scognamillo, C.
Catalano, A. P.
Borghese, A.
Riccio, M.
d'Alessandro, V
Breglio, G.
Trace, A.
Tripathi, R. N.
Castellazzi, A.
Codecasa, L.
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 123 - 126
[50] Thermal modeling of power BJT and IGBT
Srihari, T.
Kamaraj, V.
2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2007, : 87 - 96

← 1 2 3 4 5 →