Electrothermal Model of SiC Power BJT

被引：8
|
作者：
Patrzyk, Joanna [1 ]
Bisewski, Damian [1 ]
Zarebski, Janusz [1 ]
机构：
[1] Gdynia Maritime Univ, Dept Marine Elect, PL-81225 Gdynia, Poland
来源：
ENERGIES | 2020年 / 13卷 / 10期
关键词：
BJT; modelling; self-heating; silicon carbide; SPICE; SEMICONDUCTOR-DEVICES;
D O I：
10.3390/en13102617
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel-Poon model, but several modifications were made including the improved current gain factor (beta) model and the modified model of the quasi-saturation region. The accuracy of the presented model was assessed by comparison of measurement and simulation results of selected characteristics of the BT1206-AC SiC BJT manufactured by TranSiC. In this paper, a single device characterization has only been performed. The demonstrated results of research show the evident temperature impact on the transistor d.c. characteristics. A good compliance between the measured and calculated characteristics of the considered transistor is observed even in quasi-saturation mode.
引用
收藏
页数：9
相关论文
共 50 条
  • [31] Behavioral Approach to SiC MPS Diode Electrothermal Model Generation
    Starzak, Lukasz
    Zubert, Mariusz
    Janicki, Marcin
    Torzewicz, Tomasz
    Napieralska, Malgorzata
    Jablonski, Grzegorz
    Napieralski, Andrzej
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) : 630 - 638
  • [32] A fast forecasting model of electrothermal distribution for parallelled SiC MOSFETs
    Qin, Haihong
    Hu, Haoxiang
    Zhu, Ziyue
    Xiu, Qiang
    Xie, Libiao
    Hu, Liming
    ENERGY REPORTS, 2022, 8 : 648 - 656
  • [33] Design and technology considerations for a RF BJT in SiC
    Bakowski, M
    Ericsson, P
    Harris, C
    Konstantinov, A
    Savage, S
    Schöner, A
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 797 - 800
  • [34] Measurements of transient thermal impedance of SiC BJT
    Szelagowska, Joanna
    Bisewski, Damian
    Zarebski, Janusz
    PRZEGLAD ELEKTROTECHNICZNY, 2020, 96 (02): : 178 - 181
  • [35] Characterization of the Static and Dynamic Behavior of a SiC BJT
    Ahmed, M. M. R.
    Parker-Allotey, N-A.
    Mawby, P. A.
    Nawaz, Muhammed
    Zaring, Carina
    2008 13TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE, VOLS 1-5, 2008, : 2472 - +
  • [36] A Thermal Model for Electrothermal Simulation of Power Modules
    Meng, Jinlei
    Wen, Xuhui
    Zhong, Yulin
    Qiu, Zhijie
    Kong, Liang
    2013 INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS), 2013, : 1635 - 1638
  • [37] Electrothermal Cosimulation for Predicting the Power Loss and Temperature of SiC MOSFET Dies Assembled in a Power Module
    Nakamura, Yohei
    Evans, Tristan M.
    Kuroda, Naotaka
    Sakairi, Hiroyuki
    Nakakohara, Yusuke
    Otake, Hirotaka
    Nakahara, Ken
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2020, 35 (03) : 2950 - 2958
  • [38] Switching characteristics analysis and power loss minimization of SiC BJT based on dual power supply RC driving circuit
    Qin, Haihong
    Peng, Jiangjin
    Xie, Sixuan
    Mo, Yubin
    Xiu, Qiang
    Chen, Wenming
    ENERGY REPORTS, 2022, 8 : 710 - 720
  • [39] Analysis and Modeling of Electrothermal Characteristics of SiC Power Module Based on Planar Interconnection
    Wang, Liang
    Liang, Yu
    Zhao, Mingzhi
    Zhang, Tongyu
    Wang, Yuchen
    Zhang, Jin
    2023 24TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY, ICEPT, 2023,
  • [40] Electrical Insulation Design and Accurate Estimation of Temperature via an Electrothermal Model for a 10 kV SiC Power Module Packaging
    Tousi, Maryam M.
    Ghassemi, Mona
    2020 IEEE CONFERENCE ON ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA (2020 IEEE CEIDP), 2020, : 407 - 410
12345