Design and technology considerations for a RF BJT in SiC

被引：0

作者：

Bakowski, M ^{[1
]}

Ericsson, P

Harris, C

Konstantinov, A

Savage, S

Schöner, A

机构：

[1] KTH, Royal Inst Technol, Dept Microelect & Informat Elect 229, SE-16440 Kista, Sweden

[2] Acreo, SE-16440 Kista, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

BJT; RF; SiC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The technology evaluation study has been performed using numerical simulation in order to determine the expected prestanda of a SiC bipolar transistor used as a RF power element. The same technology could be used to fabricate a BJT for motor drive applications. The two main parameters selected for evaluation were the cut-off frequency, f(T), and the common emitter current gain, h(FE). According to simulations it should be possible to realise the 700 V BJT device with a cut-off frequency of 10 GHz and a current gain of more than 100 using the proposed technology.

引用

页码：797 / 800

页数：4

共 50 条

[1] A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology
Sun, ISM
Ng, WT
Mochizuki, H
Kanekiyo, K
Kobayashi, T
Toita, M
Imai, H
Ishikawa, A
Tamura, S
Takasuka, K
2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 50 - +
[2] Design and technology optimization of SiC-based RF MEMS switch
Lagosh, A. V.
Korlyakov, A. V.
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), 2017, 917
[3] The Optimization Design of Dual-Source Driver for SiC BJT
Qin, Haihong
Liu, Qing
Zhang, Ying
Yu, Junyue
Wang, Dan
Wang, Shishan
PROCEEDINGS OF THE 2017 12TH IEEE CONFERENCE ON INDUSTRIAL ELECTRONICS AND APPLICATIONS (ICIEA), 2017, : 1 - 6
[4] Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
Zhang, Qingchun
Agarwal, Anant K.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (10): : 2431 - 2456
[5] RF AND IF AMPLIFIER DESIGN CONSIDERATIONS
SANTILLI, RA
IEEE TRANSACTIONS ON BROADCAST AND TELEVISION RECEIVERS, 1967, BT13 (03): : 113 - &
[6] Modeling and Simulation of a SiC BJT
Gachovska, T. K.
Du, B.
Hudgins, J. L.
Grekov, A.
Bryant, A.
Santi, E.
Mantooth, H. A.
Agarwal, A.
2009 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION, VOLS 1-6, 2009, : 487 - +
[7] Practical Considerations of SiC Technology for UAV
Leuchter, Jan
Boril, Jan
Blasch, Erik
2016 IEEE/AIAA 35TH DIGITAL AVIONICS SYSTEMS CONFERENCE (DASC), 2016,
[8] Design of an RF BJT-low noise amplifier at 1GHz
Hatta, Sharifah Fatmadiana Wan Muhamad
Soin, Norhayati
2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2006, : 747 - +
[9] Design considerations for microwave RF repeaters
Johnson, ER
MICROWAVES & RF, 2004, 43 (06) : 84 - +
[10] Design considerations for future RF circuits
Razavi, Behzad
2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 741 - 744

← 1 2 3 4 5 →