Design and technology considerations for a RF BJT in SiC

被引：0
|
作者：
Bakowski, M [1 ]
Ericsson, P
Harris, C
Konstantinov, A
Savage, S
Schöner, A
机构：
[1] KTH, Royal Inst Technol, Dept Microelect & Informat Elect 229, SE-16440 Kista, Sweden
[2] Acreo, SE-16440 Kista, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷
关键词：
BJT; RF; SiC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The technology evaluation study has been performed using numerical simulation in order to determine the expected prestanda of a SiC bipolar transistor used as a RF power element. The same technology could be used to fabricate a BJT for motor drive applications. The two main parameters selected for evaluation were the cut-off frequency, f(T), and the common emitter current gain, h(FE). According to simulations it should be possible to realise the 700 V BJT device with a cut-off frequency of 10 GHz and a current gain of more than 100 using the proposed technology.
引用
收藏
页码：797 / 800
页数：4
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