A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

被引:0
|
作者
Sun, ISM [1 ]
Ng, WT
Mochizuki, H
Kanekiyo, K
Kobayashi, T
Toita, M
Imai, H
Ishikawa, A
Tamura, S
Takasuka, K
机构
[1] Asahi Kasei Microsyst Co Ltd, Atsugi AXT Maintower, Atsugi, Kanagawa 2430021, Japan
[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 1A1, Canada
关键词
BiCMOS integrated circuits; silicon bipolar junction transistors (Si BJTs); silicon-on-insulator (SOI); RF system-on-chip (RF-SoC); lateral BJTs;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work presents a lateral RF BJT built on SOI-CMOS compatible substrate. The primary motivation is to realize a SOI-BiCMOS technology suitable for low power RF and mixed-signal SoC. This novel LBJT structure relies on a self-aligned polysilicon side-wall-spacer (PSWS) to connect the base contact to the intrinsic base with dimensions in 100 nm range. The fabricated LBJTs exhibit superior Johnson's product (f(tau)xBV(CEO)) in the range between 190-300 GHz(.)V. The f(max) of the optimal device reaches 46 GHz at collector current density of only 0.15 mA/mu m(2). Both figure-of-merits are in-line with advanced SiGe-HBT devices, and superior than previously published data on lateral BJTs.
引用
收藏
页码:50 / +
页数:2
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