A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

被引：0

作者：

Sun, ISM ^{[1
]}

Ng, WT

Mochizuki, H

Kanekiyo, K

Kobayashi, T

Toita, M

Imai, H

Ishikawa, A

Tamura, S

Takasuka, K

机构：

[1] Asahi Kasei Microsyst Co Ltd, Atsugi AXT Maintower, Atsugi, Kanagawa 2430021, Japan

[2] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 1A1, Canada

来源：

2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年

关键词：

BiCMOS integrated circuits; silicon bipolar junction transistors (Si BJTs); silicon-on-insulator (SOI); RF system-on-chip (RF-SoC); lateral BJTs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a lateral RF BJT built on SOI-CMOS compatible substrate. The primary motivation is to realize a SOI-BiCMOS technology suitable for low power RF and mixed-signal SoC. This novel LBJT structure relies on a self-aligned polysilicon side-wall-spacer (PSWS) to connect the base contact to the intrinsic base with dimensions in 100 nm range. The fabricated LBJTs exhibit superior Johnson's product (f(tau)xBV(CEO)) in the range between 190-300 GHz(.)V. The f(max) of the optimal device reaches 46 GHz at collector current density of only 0.15 mA/mu m(2). Both figure-of-merits are in-line with advanced SiGe-HBT devices, and superior than previously published data on lateral BJTs.

引用

页码：50 / +

页数：2

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