Smooth interface effects on the Raman scattering in zinc-blende AlN/GaN superlattices

被引:16
|
作者
Bezerra, EF [1 ]
Freire, VN [1 ]
Teixeira, AMR [1 ]
Silva, MAA [1 ]
Freire, PTC [1 ]
Mendes, J [1 ]
Lemos, V [1 ]
机构
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, UNICAMP, BR-13083970 Campinas, SP, Brazil
关键词
D O I
10.1103/PhysRevB.61.13060
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Raman spectra of (AlN)(8-delta)/(AlxGa1-xN)(delta)/(GaN)(8-delta)/(AlxGa1-xN)(delta) superlattices with interface thickness varying between delta = 0 and delta = 3 are calculated. The influence of the nonabrupt interface related broadening is described in the complete range of scattering, with special attention to the modes giving stronger contribution to the Raman intensity. It is shown that the dispersion of folded acoustic phonons does not change appreciably with the interface smoothing. For delta = 0 the Raman spectra display new peaks due to the enhancement of some confined optic modes.
引用
收藏
页码:13060 / 13063
页数:4
相关论文
共 50 条
  • [21] Surface reconstruction of zinc-blende GaN
    Bykhovski, AD
    Shur, MS
    APPLIED PHYSICS LETTERS, 1996, 69 (16) : 2397 - 2399
  • [22] Electronic structure of wurtzite and zinc-blende AlN
    Jonnard, P
    Capron, N
    Semond, F
    Massies, J
    Martinez-Guerrero, E
    Mariette, H
    EUROPEAN PHYSICAL JOURNAL B, 2004, 42 (03): : 351 - 359
  • [23] Beyond spatial correlation effect in micro-Raman light scattering: An example of zinc-blende GaN/GaAs hetero-interface
    Xu, S.J. (sjxu@hku.hk), 1600, American Institute of Physics Inc. (118):
  • [24] Beyond spatial correlation effect in micro-Raman light scattering: An example of zinc-blende GaN/GaAs hetero-interface
    Ning, J. Q.
    Zheng, C. C.
    Zheng, L. X.
    Xu, S. J.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (07)
  • [25] Band-structure pseudopotential calculation of zinc-blende and wurtzite AlN, GaN, and InN
    Fritsch, D
    Schmidt, H
    Grundmann, M
    PHYSICAL REVIEW B, 2003, 67 (23):
  • [26] RAMAN SCATTERING BY TO AND LO PHONONS IN ZINC-BLENDE AND WURTZITE TYPE CRYSTALS
    USHIODA, S
    PINCZUK, A
    BURSTEIN, E
    MILLS, DL
    SOLID STATE COMMUNICATIONS, 1968, 6 (10) : R12 - &
  • [27] Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
    Fan, WJ
    Li, MF
    Chong, TC
    Xia, JB
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) : 188 - 194
  • [28] Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence
    Lagarde, D.
    Balocchi, A.
    Carrrere, H.
    Renucci, P.
    Amand, T.
    Founta, S.
    Mariette, H.
    Marie, X.
    MICROELECTRONICS JOURNAL, 2009, 40 (02) : 328 - 330
  • [29] Surface kinetics of zinc-blende (001)GaN
    Brandt, O
    Yang, H
    Ploog, KH
    PHYSICAL REVIEW B, 1996, 54 (07): : 4432 - 4435
  • [30] Iron and manganese doped zinc-blende GaN
    Fong, CY
    Gubanov, VA
    Boekema, C
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (09) : 1067 - 1073