Beyond spatial correlation effect in micro-Raman light scattering: An example of zinc-blende GaN/GaAs hetero-interface

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机构：

[1] [1,Ning, J.Q.

[2] 1,Zheng, C.C.

[3] Zheng, L.X.

[4] Xu, S.J.

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Xu, S.J. (sjxu@hku.hk) | 1600年 / American Institute of Physics Inc.卷 / 118期

关键词：

Spatially resolved Raman light scattering experiments were performed on a zinc-blende GaN/GaAs heterostructure with confocal micro-Raman scattering technique under the backscattering geometric configuration. By varying the illumination spot locations across the heterostructure interface; we found that the Raman light scattering spectral features change remarkably. The interface effect on the GaAs substrate manifested as a much broader lineshape of the transverse optical (TO) phonon mode. Two kinds of broadening mechanisms; namely; spatial correlation induced wave-vector relaxation effect and lattice-mismatch strain + compositional intermixing effect; have been identified. The former leads to the broadening of the TO mode at the low-energy side; whereas the latter accounts for the broadening at the high-energy side. The diffuse light scattering from the highly defective nucleation layer of GaN was found to produce a broad scattering background of the GaN TO mode. The methodology and conclusions of the present work could be applicable to Raman spectroscopic studies on other material interfaces. © 2015 AIP Publishing LLC;

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