Study of latch-up immunization in bulk CMOS integrated circuits exposed to transient ionizing radiation

被引：10

作者：

Li RuiBin ^{[1
]}

Chen Wei ^{[1
]}

Lin DongSheng ^{[1
]}

Yang ShanChao ^{[1
]}

Bai XiaoYan ^{[1
]}

Wang GuiZhen ^{[1
]}

Liu Yan ^{[1
]}

Qi Chao ^{[1
]}

Ma Qiang ^{[1
]}

机构：

[1] NW Inst Nucl Technol, Xian 710024, Peoples R China

来源：

SCIENCE CHINA-TECHNOLOGICAL SCIENCES | 2012年 / 55卷 / 11期

关键词：

transient radiation; latch up; dose rate; bulk CMOS device; DEVICES; PREVENTION;

D O I：

10.1007/s11431-012-4895-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper presents experimental results of transient gamma irradiation effects on two kinds of circuits. One is a two-stage circuit consisting of a bipolar power device L7805CV and a bulk complementary metal-oxide-semiconductor (CMOS) device IDT6116, the other is a two-stage circuit consisting of a bipolar power device L7805CV and the equivalent circuit of the parasitic P-N-P-N structure in bulk CMOS devices. The results show that the L7805CV's output interruption after transient irradiation can prevent latch-up from occurring on the second stage circuit. The demanded minimum interruption duration to avoid latch-up varies with dose rate, and this is confirmed by the experimental results.

引用

页码：3242 / 3247

页数：6

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