HIGH TEMPERATURE SENSOR BASED ON SiC SCHOTTKY DIODES WITH UNDOPED OXIDE RAMP TERMINATION

被引：0
|
作者：
Pascu, R. [1 ]
Draghici, F. [1 ,2 ]
Badila, M. [3 ]
Craciunoiu, F. [1 ]
Brezeanu, G. [2 ]
Dinescu, A. [1 ]
Rusu, I. [2 ]
机构：
[1] IMT Bucharest, Natl Inst Res & Dev Microtechnol, Erou Iancu Nicolae 126A 32B, Bucharest 077190, Romania
[2] Univ Bucharest, Bucharest, Romania
[3] ON Semicond Corp, Phoenix, AZ USA
来源：
2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2 | 2011年
关键词：
high temperature sensors; silicon carbide (SiC); oxide ramp termination; packaging;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple technology of 4H-SiC Schottky diode with oxide ramp termination is presented. The ramp is controlled by two undoped layers: an annealed (compact) oxide layer and as deposited layer, respectively.
引用
收藏
页码：379 / 382
页数：4
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