Solvent effects and multiple aggregate states in high-mobility organic field-effect transistors based on poly(bithiophene-alt-thienothiophene)

被引:35
|
作者
Wang, Shuai [1 ]
Tang, Jie-Cong [2 ]
Zhao, Li-Hong [1 ]
Png, Rui-Qi [1 ]
Wong, Loke-Yuen [1 ]
Chia, Perq-Jon [1 ]
Chan, Hardy S. O. [2 ]
Ho, Peter K. -H. [1 ]
Chua, Lay-Lay [1 ,2 ]
机构
[1] Natl Univ Singapore, Dept Phys, Singapore S117542, Singapore
[2] Natl Univ Singapore, Dept Chem, Singapore S117543, Singapore
关键词
D O I
10.1063/1.3001574
中图分类号
O59 [应用物理学];
学科分类号
摘要
Franck-Condon absorption analysis reveals the existence of several aggregate states in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) thin films which impact their recrystallization and the attainable field-effect mobility (mu(FET)). Poor solvents (toluene and mixed-xylenes) lock in both disordered and well-ordered states that cannot be annealed away even in the liquid crystalline phase. This reduces mu(FET) and increases mobility activation energies compared with films from good solvents (chlorobenzene and o-dichlorobenzene). Despite its poor solubility characteristics, PBTTT can be ink-jet printed in dilute chlorobenzene, and devices can be operated unencapsulated in ambient, in the dark (>10(5) cycles over several days) with only a moderate mobility loss. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001574]
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Graphene flakes at the SiO2/organic-semiconductor interface for high-mobility field-effect transistors
    Pathipati, Srinivasa Rao
    Pavlica, Egon
    Parvez, Khaled
    Feng, Xinliang
    Muellen, Klaus
    Bratina, Gvido
    ORGANIC ELECTRONICS, 2015, 27 : 221 - 226
  • [42] High-mobility copper-phthalocyanine field-effect transistors with tetratetracontane passivation layer and organic metal contacts
    Kraus, Michael
    Richler, Stefan
    Opitz, Andreas
    Bruetting, Wolfgang
    Haas, Simon
    Hasegawa, Tatsuo
    Hinderhofer, Alexander
    Schreiber, Frank
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
  • [43] High-mobility, low-power, and fast-switching organic field-effect transistors with ionic liquids
    Ono, S.
    Seki, S.
    Hirahara, R.
    Tominari, Y.
    Takeya, J.
    APPLIED PHYSICS LETTERS, 2008, 92 (10)
  • [44] Fabrication of high-mobility organic single-crystal field-effect transistors with amorphous fluoropolymer gate insulators
    Uno, Mayumi
    Tominari, Y.
    Takeya, J.
    ORGANIC ELECTRONICS, 2008, 9 (05) : 753 - 756
  • [45] Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors
    Zhao, Shuai
    Yuan, Guodong
    Zhang, Di
    Wu, Xingjun
    Han, Weihua
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 138
  • [46] Isoindigo-Based Polymers with Small Effective Masses for High-Mobility Ambipolar Field-Effect Transistors
    Yang, Jie
    Zhao, Zhiyuan
    Geng, Hua
    Cheng, Changli
    Chen, Jinyang
    Sun, Yunlong
    Shi, Longxian
    Yi, Yuanping
    Shuai, Zhigang
    Guo, Yunlong
    Wang, Shuai
    Liu, Yunqi
    ADVANCED MATERIALS, 2017, 29 (36)
  • [47] Scattering suppression at MOS interface towards high-mobility Si-based field-effect transistors
    Zhao, Shuai
    Yuan, Guodong
    Zhang, Di
    Wu, Xingjun
    Han, Weihua
    Materials Science in Semiconductor Processing, 2022, 138
  • [48] High mobility C60 organic field-effect transistors
    Haddock, NJ
    Domercq, B
    Kippelen, B
    ELECTRONICS LETTERS, 2005, 41 (07) : 444 - 446
  • [49] Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors
    Fang, Hui
    Chuang, Steven
    Takei, Kuniharu
    Kim, Ha Sul
    Plis, Elena
    Liu, Chin-Hung
    Krishna, Sanjay
    Chueh, Yu-Lun
    Javey, Ali
    IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) : 504 - 506
  • [50] Origin of multiple memory states in organic ferroelectric field-effect transistors
    Kam, Benjamin
    Li, Xiaoran
    Cristoferi, Claudio
    Smits, Edsger C. P.
    Mityashin, Alexander
    Schols, Sarah
    Genoe, Jan
    Gelinck, Gerwin
    Heremans, Paul
    APPLIED PHYSICS LETTERS, 2012, 101 (03)