Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

被引：22

作者：

Fang, Hui ^{[1
]}

Chuang, Steven ^{[1
]}

Takei, Kuniharu ^{[1
]}

Kim, Ha Sul ^{[1
]}

Plis, Elena ^{[2
]}

Liu, Chin-Hung ^{[3
]}

Krishna, Sanjay ^{[2
]}

Chueh, Yu-Lun ^{[3
]}

Javey, Ali ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[2] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

[3] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 04期

基金：

美国国家科学基金会;

关键词：

Field-effect transistors (FETs); InAsSb; ultrathin body (UTB); XOI; HIGH-PERFORMANCE;

D O I：

10.1109/LED.2012.2185477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the layer transfer of ultrathin InAs0.7Sb0.3 layers (thickness of 7-17 nm) onto Si/SiO2 substrates. InAsSb-on-insulator FETs exhibit an effective mobility of similar to 3400 cm(2)/V . s for a body thickness of 7 nm, which represents similar to 2x enhancement over InAs devices of similar thickness. The top-gated FETs deliver an intrinsic transconductance of similar to 0.56 mS/mu m (gate length of similar to 500 nm) at V-DS = 0.5 V with I-ON/I-OFF of 10(2)-10(3). These results demonstrate the utility of the transfer process for obtaining high-mobility n-FETs on Si substrates by using mixed anion arsenide-antimonide as the active channel material.

引用

页码：504 / 506

页数：3

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