Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the layer transfer of ultrathin InAs0.7Sb0.3 layers (thickness of 7-17 nm) onto Si/SiO2 substrates. InAsSb-on-insulator FETs exhibit an effective mobility of similar to 3400 cm(2)/V . s for a body thickness of 7 nm, which represents similar to 2x enhancement over InAs devices of similar thickness. The top-gated FETs deliver an intrinsic transconductance of similar to 0.56 mS/mu m (gate length of similar to 500 nm) at V-DS = 0.5 V with I-ON/I-OFF of 10(2)-10(3). These results demonstrate the utility of the transfer process for obtaining high-mobility n-FETs on Si substrates by using mixed anion arsenide-antimonide as the active channel material.