Origin of multiple memory states in organic ferroelectric field-effect transistors

被引：38

作者：

Kam, Benjamin ^{[1
,2
]}

Li, Xiaoran ^{[3
,4
]}

Cristoferi, Claudio ^{[5
]}

Smits, Edsger C. P. ^{[3
]}

Mityashin, Alexander ^{[1
,2
]}

Schols, Sarah ^{[1
]}

Genoe, Jan ^{[1
]}

Gelinck, Gerwin ^{[3
]}

Heremans, Paul ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT, B-3001 Louvain, Belgium

[3] TNO Holst Ctr, NL-5656 AE Eindhoven, Netherlands

[4] Eindhoven Univ Technol, NL-5612 AZ Eindhoven, Netherlands

[5] Politecn Torino, Turin, Italy

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

POLYMER;

D O I：

10.1063/1.4737176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737176]

引用

页数：5

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[J]. SOLID-STATE ELECTRONICS, 1977, 20 (06) : 529 - 537
[2] Physics of organic ferroelectric field-effect transistors
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