Enhanced memory characteristics in organic ferroelectric field-effect transistors through thermal annealing

被引：5

作者：

Sugano, Ryo ^{[1
,2
]}

Tashiro, Tomoya ^{[1
,2
]}

Sekine, Tomohito ^{[1
,2
]}

Fukuda, Kenjiro ^{[1
,2
]}

Kumaki, Daisuke ^{[1
,2
]}

Tokito, Shizuo ^{[1
,2
]}

机构：

[1] Yamagata Univ, Grad Sch Sci & Engn, Yonezawa, Yamagata 9928510, Japan

[2] Yamagata Univ, Res Ctr Organ Elect ROEL, Yonezawa, Yamagata 9928510, Japan

来源：

AIP ADVANCES | 2015年 / 5卷 / 11期

关键词：

NONVOLATILE POLYMER MEMORY; THRESHOLD VOLTAGE; COPOLYMER; FILM; ORIENTATION; MONOLAYERS; SHIFT;

D O I：

10.1063/1.4935342

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 10(4). Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices. (C) 2015 Author(s).

引用

页数：7

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