Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories

被引：16
|
作者：
Choe, Byeong-In [1 ,2 ,3 ]
Lee, Jung-Kyu [1 ,2 ]
Park, Byung-Gook [1 ,2 ]
Lee, Jong-Ho [1 ,2 ]
机构：
[1] Seoul Natl Univ, InterUniv Semicond Res Ctr, Seoul 151742, South Korea
[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea
[3] Samsung Elect Co Ltd, Flash TD Team, Semicond Res & Dev Ctr, Hwasung 445701, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 01期
关键词：
NAND flash; read disturb; 3-D stack NAND flash; hot carrier injection;
D O I：
10.1109/LED.2013.2288991
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell V-th shift generated by boosting hot carrier injection. As a result, the cell V-th shift in unselected string is quite similar to normal read disturbance in select string. The proposed read method was verified by both measurement and simulation.
引用
收藏
页码：42 / 44
页数：3
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