GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer

被引：3
|
作者：
Chang, Shoou-Jinn [1 ,2 ,3 ]
Lu, Lucent [4 ]
Lin, Yu-Yao [5 ]
Li, Shuguang [1 ]
机构：
[1] China Univ Petr East China, Coll Sci, Qingdao 266555, Shandong, Peoples R China
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan
[4] Rishang Optoelect Co Ltd, Commercial Lighting Div, Shenzhen 518108, Guangdong, Peoples R China
[5] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 11期
关键词：
Droop; light-emitting diode (LED); Raman scattering; strain compensation; NITRIDE-BASED LEDS; OUTPUT POWER; QUANTUM; LASERS; BLUE;
D O I：
10.1109/JDT.2013.2269477
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively.
引用
收藏
页码：910 / 914
页数：5
相关论文
共 50 条
  • [1] On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes
    Xia, Chang Sheng
    Li, Z. M. Simon
    Sheng, Yang
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (23)
  • [2] Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes
    Liu, YH
    Li, HD
    Ao, JP
    Lee, YB
    Wang, T
    Sakai, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) : 30 - 34
  • [3] Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer
    Kang, Junjie
    Li, Hongjian
    Li, Zhi
    Liu, Zhiqiang
    Ma, Ping
    Yi, Xiaoyan
    Wang, Guohong
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (10)
  • [4] Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes
    Wang, T
    Liu, YH
    Lee, YB
    Izumi, Y
    Ao, JP
    Bai, J
    Li, HD
    Sakai, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 177 - 182
  • [5] GaN-Based Blue Light-Emitting Diodes with an Electron Transmission Layer
    Jheng, J. S.
    Wang, C. K.
    Chiou, Y. Z.
    Chang, S. P.
    Chang, S. J.
    [J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2017, 6 (10) : R154 - R157
  • [6] Structural and optical characterizations of GaN-based green light-emitting diodes growth using TiN buffer layer
    Shieh, C. Y.
    Li, Z. Y.
    Kuo, H. C.
    Chi, G. C.
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
  • [7] The fabrication of GaN-based nanopillar light-emitting diodes
    Zhu, Jihong
    Wang, Liangji
    Zhang, Shuming
    Wang, Hui
    Zhao, Degang
    Zhu, Jianjun
    Liu, Zongshun
    Jiang, Desheng
    Yang, Hui
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
  • [8] Recent Progress in GaN-Based Light-Emitting Diodes
    Jia, Haiqiang
    Guo, Liwei
    Wang, Wenxin
    Chen, Hong
    [J]. ADVANCED MATERIALS, 2009, 21 (45) : 4641 - 4646
  • [9] Brightness of blue GaN-based light-emitting diodes
    Grushko, N. S.
    Lakalin, A. V.
    Solonin, A. P.
    [J]. INORGANIC MATERIALS, 2008, 44 (02) : 139 - 141
  • [10] High brightness GaN-based light-emitting diodes
    Lee, Ya-Ju
    Lu, Tien-Chang
    Kuo, Hao-Chung
    Wang, Shing-Chung
    [J]. JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02): : 118 - 125
12345