GaN-Based Light-Emitting Diodes With AlGaN Strain Compensation Buffer Layer

被引：3
|
作者：
Chang, Shoou-Jinn [1 ,2 ,3 ]
Lu, Lucent [4 ]
Lin, Yu-Yao [5 ]
Li, Shuguang [1 ]
机构：
[1] China Univ Petr East China, Coll Sci, Qingdao 266555, Shandong, Peoples R China
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 70101, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan
[4] Rishang Optoelect Co Ltd, Commercial Lighting Div, Shenzhen 518108, Guangdong, Peoples R China
[5] Natl Cheng Kung Univ, Dept Photon, Tainan 70101, Taiwan
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 11期
关键词：
Droop; light-emitting diode (LED); Raman scattering; strain compensation; NITRIDE-BASED LEDS; OUTPUT POWER; QUANTUM; LASERS; BLUE;
D O I：
10.1109/JDT.2013.2269477
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An AlGaN strain compensation layer (SCL) was proposed to modulate the strain and thus alleviate the polarization of GaN-based light-emitting diodes (LEDs). With the SCL, it was found that the 350 mA LED output power could be enhanced from 258 to 285 mW. It was also found that the SCL could alleviate the efficiency droop and reduce the forward voltage of the LEDs. These improvements could all be attributed to in-plane tensile strain induced by the AlGaN layer which could effectively compensate the compressive strain induced by the InGaN well layers. From micro-Raman spectra measurement, it was found that in-plane biaxial stresses in the reference and SCL samples were 0.30 and 0.07 GPa, respectively.
引用
收藏
页码：910 / 914
页数：5
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